High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition

Qingyun Sun, Peipei Zhu, Qingfang Xu, Rong Tu, Song Zhang, Ji Shi, Haiwen Li, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

3C-SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C-SiC (111) polycrystalline films were prepared at deposition temperature (Tdep) of 1423-1523 K, whereas the 3C-SiC (111) epitaxial films were obtained at 1573-1648 K with the thickness of 5.40 to 9.32 μm. The in-plane relationship was 3C-SiC [-1-12]//Si [001] and 3C-SiC [-110]//Si [-110]. The deposition rates (Rdep) were 16.2-28.0 μm/h, which are 2 to 100 times higher than that of 3C-SiC (111) epi-grown on Si (111) by conventional CVD. The growth mechanism of 3C-SiC (111) epitaxial films has also been proposed.

Original languageEnglish
Pages (from-to)1048-1057
Number of pages10
JournalJournal of the American Ceramic Society
Volume101
Issue number3
DOIs
Publication statusPublished - 2018 Mar

Keywords

  • 3C-SiC (111)
  • Si (110)
  • heteroepitaxial growth
  • laser CVD
  • orientation

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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