TY - JOUR
T1 - High-speed epitaxial growth of SrTiO3 films on MgO substrates by laser chemical vapor deposition
AU - Chen, Jianchao
AU - Ito, Akihiko
AU - Goto, Takashi
N1 - Funding Information:
This research was supported in part by the Japan Society for the Promotion of Science , Grant-in-Aid for Young Scientists (A) (No. 25709069 ), and in part by the cooperative program (No. 15G0410 ) of the CRDAM-IMR, Tohoku University .
Publisher Copyright:
© 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
PY - 2016/6/1
Y1 - 2016/6/1
N2 - Epitaxial (100) and (111) SrTiO3 films were prepared on (100) and (111) MgO single-crystal substrates, respectively, using laser chemical vapor deposition. The effect of deposition temperature (Tdep) on the orientation and microstructure of the SrTiO3 films was investigated. On the (100) MgO substrates, SrTiO3 films showed a (111) orientation at a low Tdep of 1023 K. (100) SrTiO3 films, which were epitaxially grown at Tdep=1123-1203 K, had dense cross sections and flat surfaces with rectangular-shaped terraces. On the (111) MgO substrates, (111) SrTiO3 films were epitaxially grown at Tdep=983-1063 K; however, these films' orientations became random at high Tdep of 1063-1113 K. The (111) SrTiO3 films consisted of columnar grains with triangular pyramidal caps. The deposition rates of the epitaxial (100) and (111) SrTiO3 films were 13-25 and 18-32 μm h-1, respectively, which is 5-530 times higher than those obtained by MOCVD.
AB - Epitaxial (100) and (111) SrTiO3 films were prepared on (100) and (111) MgO single-crystal substrates, respectively, using laser chemical vapor deposition. The effect of deposition temperature (Tdep) on the orientation and microstructure of the SrTiO3 films was investigated. On the (100) MgO substrates, SrTiO3 films showed a (111) orientation at a low Tdep of 1023 K. (100) SrTiO3 films, which were epitaxially grown at Tdep=1123-1203 K, had dense cross sections and flat surfaces with rectangular-shaped terraces. On the (111) MgO substrates, (111) SrTiO3 films were epitaxially grown at Tdep=983-1063 K; however, these films' orientations became random at high Tdep of 1063-1113 K. The (111) SrTiO3 films consisted of columnar grains with triangular pyramidal caps. The deposition rates of the epitaxial (100) and (111) SrTiO3 films were 13-25 and 18-32 μm h-1, respectively, which is 5-530 times higher than those obtained by MOCVD.
KW - Epitaxial growth
KW - High-speed deposition
KW - Laser chemical vapor deposition
KW - SrTiO
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U2 - 10.1016/j.ceramint.2016.03.100
DO - 10.1016/j.ceramint.2016.03.100
M3 - Article
AN - SCOPUS:84977950272
VL - 42
SP - 9981
EP - 9987
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
IS - 8
ER -