High-speed epitaxial growth of BaTi 2 O 5 thick films and their in-plane orientations

Dongyun Guo, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Epitaxial BaTi 2 O 5 (BT 2 ) thick films were prepared on (1 0 0), (1 1 0) and (1 1 1) MgO single-crystal substrates by laser chemical vapor deposition. (0 1 0)- and (1 1 2)-oriented BT 2 thick films grew epitaxially on (1 0 0) and (1 1 0) MgO substrates at deposition temperatures of 1326-1387 K and 1324-1383 K, respectively. On the (1 1 1) MgO substrate, BT 2 thick film showed (313̄) and (113̄) co-orientations at 1337-1353 K. Epitaxial BT 2 thick films had a columnar structure in cross-section and the deposition rate reached 42 μm h -1 . The typical in-plane orientations of the epitaxial BT 2 films were BT 2 [201̄]//MgO [01̄0] for BT 2 (0 1 0)//MgO (1 0 0), BT 2 [201̄]//MgO [0 0 1] for BT 2 (1 1 2)//MgO (1 1 0), BT 2 [1 0 1]//MgO [01̄1] for (313̄) BT 2 //MgO (1 1 1), and BT 2 [3 0 1]//MgO [011̄] for (113̄) BT 2 //MgO (1 1 1).

Original languageEnglish
Pages (from-to)178-185
Number of pages8
JournalApplied Surface Science
Volume259
DOIs
Publication statusPublished - 2012 Oct 15

Keywords

  • Epitaxial growth
  • High-speed deposition
  • Laser CVD

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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