High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

Pei Zhao, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


(100)-oriented CeO2 film was prepared on r-cut sapphire ((11̄02)Al2O3) by laser chemical vapor deposition at laser powers from 123 to 182W with deposition temperatures ranging from 1042 to 1122K. The (100) CeO2 films grew epitaxially on (11̄02)Al2O3 substrate with the in-plane orientation relationship of CeO2 [010] // Al2O3 [1̄101] and CeO2 [001] // Al2O3 [112̄0]. The surface morphology of the CeO2 films was characterized by elongated grains with truncated pyramidal cap. The deposition rate of the CeO2 film was 10-15μmh-1, about 10-15 times higher than those of conventional metalorganic CVD.

Original languageEnglish
Pages (from-to)4079-4082
Number of pages4
JournalSurface and Coatings Technology
Issue number16
Publication statusPublished - 2011 May 15


  • CeO
  • High deposition rate
  • Laser chemical vapor deposition
  • R-cut sapphire

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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