High-speed epitaxial growth of β- SiC film on Si (111) single crystal by laser chemical vapor deposition

Song Zhang, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

(111)-oriented β-SiC film was prepared on Si(111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β-SiC film grew epitaxially on the Si(111) substrate with in-plane orientation relationship of SiC [1̄10]//Si [1̄10] and SiC [1̄01]//Si [1̄01]. The deposition rate of the β-SiC film was 40 μm/h, 10 times higher than that of conventional CVD.

Original languageEnglish
Pages (from-to)2782-2784
Number of pages3
JournalJournal of the American Ceramic Society
Volume95
Issue number9
DOIs
Publication statusPublished - 2012 Sep 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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