High-speed deposition of yttria stabilized zirconia by MOCVD

Rong Tu; Teiichi Kimura; Takashi Goto

doi:10.1016/j.surfcoat.2004.02.016

High-speed deposition of yttria stabilized zirconia by MOCVD

Rong Tu, Teiichi Kimura, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Metal-organic chemical vapor deposition (MOCVD) was applied to prepare yttria stabilized zirconia (YSZ) films using Zr(dpm)₄ and Y(dpm)₃ precursors. The crystal structure of YSZ films changed with increasing Y₂O₃ content from a mixture of monoclinic and tetragonal phases (0-2 mol% Y₂O₃) to a tetragonal phase (2-8 mol% Y₂O₃) to a cubic phase (above 8 mol% Y₂O₃). YSZ films with a well-developed columnar structure and a significant (200) orientation were obtained at T_dep =923 to 1073 K. The deposition rate showed the highest value of 108 μm h^-1 at T_dep=1073 K, total pressure P_tot=0.8 kPa, molar fraction of Zr precursor x _Zr=0.018 and that of oxygen gas x_O2=0.25.

Original language	English
Pages (from-to)	238-244
Number of pages	7
Journal	Surface and Coatings Technology
Volume	187
Issue number	2-3
DOIs	https://doi.org/10.1016/j.surfcoat.2004.02.016
Publication status	Published - 2004 Oct 22

Keywords

Crystal structure
Deposition rate
Metal-organic chemical vapor deposition
Microstructure
Yttria stabilized zirconia

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2004.02.016

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title = "High-speed deposition of yttria stabilized zirconia by MOCVD",

abstract = "Metal-organic chemical vapor deposition (MOCVD) was applied to prepare yttria stabilized zirconia (YSZ) films using Zr(dpm)4 and Y(dpm)3 precursors. The crystal structure of YSZ films changed with increasing Y2O3 content from a mixture of monoclinic and tetragonal phases (0-2 mol% Y2O3) to a tetragonal phase (2-8 mol% Y2O3) to a cubic phase (above 8 mol% Y2O3). YSZ films with a well-developed columnar structure and a significant (200) orientation were obtained at Tdep =923 to 1073 K. The deposition rate showed the highest value of 108 μm h-1 at Tdep=1073 K, total pressure Ptot=0.8 kPa, molar fraction of Zr precursor x Zr=0.018 and that of oxygen gas xO2=0.25.",

keywords = "Crystal structure, Deposition rate, Metal-organic chemical vapor deposition, Microstructure, Yttria stabilized zirconia",

author = "Rong Tu and Teiichi Kimura and Takashi Goto",

year = "2004",

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doi = "10.1016/j.surfcoat.2004.02.016",

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journal = "Surface and Coatings Technology",

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TY - JOUR

T1 - High-speed deposition of yttria stabilized zirconia by MOCVD

AU - Tu, Rong

AU - Kimura, Teiichi

AU - Goto, Takashi

PY - 2004/10/22

Y1 - 2004/10/22

N2 - Metal-organic chemical vapor deposition (MOCVD) was applied to prepare yttria stabilized zirconia (YSZ) films using Zr(dpm)4 and Y(dpm)3 precursors. The crystal structure of YSZ films changed with increasing Y2O3 content from a mixture of monoclinic and tetragonal phases (0-2 mol% Y2O3) to a tetragonal phase (2-8 mol% Y2O3) to a cubic phase (above 8 mol% Y2O3). YSZ films with a well-developed columnar structure and a significant (200) orientation were obtained at Tdep =923 to 1073 K. The deposition rate showed the highest value of 108 μm h-1 at Tdep=1073 K, total pressure Ptot=0.8 kPa, molar fraction of Zr precursor x Zr=0.018 and that of oxygen gas xO2=0.25.

AB - Metal-organic chemical vapor deposition (MOCVD) was applied to prepare yttria stabilized zirconia (YSZ) films using Zr(dpm)4 and Y(dpm)3 precursors. The crystal structure of YSZ films changed with increasing Y2O3 content from a mixture of monoclinic and tetragonal phases (0-2 mol% Y2O3) to a tetragonal phase (2-8 mol% Y2O3) to a cubic phase (above 8 mol% Y2O3). YSZ films with a well-developed columnar structure and a significant (200) orientation were obtained at Tdep =923 to 1073 K. The deposition rate showed the highest value of 108 μm h-1 at Tdep=1073 K, total pressure Ptot=0.8 kPa, molar fraction of Zr precursor x Zr=0.018 and that of oxygen gas xO2=0.25.

KW - Crystal structure

KW - Deposition rate

KW - Metal-organic chemical vapor deposition

KW - Microstructure

KW - Yttria stabilized zirconia

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U2 - 10.1016/j.surfcoat.2004.02.016

DO - 10.1016/j.surfcoat.2004.02.016

M3 - Article

AN - SCOPUS:4644253917

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EP - 244

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 2-3

ER -

High-speed deposition of yttria stabilized zirconia by MOCVD

Abstract

Keywords

ASJC Scopus subject areas

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