High-speed deposition of yttria stabilized zirconia by MOCVD

Rong Tu, Teiichi Kimura, Takashi Goto

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Metal-organic chemical vapor deposition (MOCVD) was applied to prepare yttria stabilized zirconia (YSZ) films using Zr(dpm)4 and Y(dpm)3 precursors. The crystal structure of YSZ films changed with increasing Y2O3 content from a mixture of monoclinic and tetragonal phases (0-2 mol% Y2O3) to a tetragonal phase (2-8 mol% Y2O3) to a cubic phase (above 8 mol% Y2O3). YSZ films with a well-developed columnar structure and a significant (200) orientation were obtained at Tdep =923 to 1073 K. The deposition rate showed the highest value of 108 μm h-1 at Tdep=1073 K, total pressure Ptot=0.8 kPa, molar fraction of Zr precursor x Zr=0.018 and that of oxygen gas xO2=0.25.

Original languageEnglish
Pages (from-to)238-244
Number of pages7
JournalSurface and Coatings Technology
Volume187
Issue number2-3
DOIs
Publication statusPublished - 2004 Oct 22

Keywords

  • Crystal structure
  • Deposition rate
  • Metal-organic chemical vapor deposition
  • Microstructure
  • Yttria stabilized zirconia

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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