High speed deposition of y ₂O ₃ films by laser-assisted chemical vapor deposition

Thick yttria (Y ₂O ₃) films were synthesized at high speeds by laser-assisted chemical vapor deposition (LCVD) using an Y(dpm) ₃ (dpm = dipivaloylmethanate) precursor. The effects of deposition conditions on the deposition rate and their microstructure were investigated. While the deposition rate was less than a few microns per hour at low laser powers (P _L) less than 100 W, significantly high deposition rates of more than 200 μm/h (56 nm/s) were obtained at P _L more than 160 W. The highest deposition rate in this study was 300 μm/h (83 nm/s) being 100 to 1000 times greater than those of conventional CVD processes. Deposited films were dense and isotropic with no preferred orientation showing cauliflower-like microstructure.