High-speed deposition of Y-Si-O films by laser chemical vapor deposition using Nd:YAG laser

Y-Si-O films were prepared by laser chemical vapor deposition (LCVD) with a Nd:YAG laser using TEOS (tetraethyl orthosilicate) and Y(dpm)₃ precursors. The effects of laser power (P_L), deposition temperature (T_dep) and total chamber pressure (P_tot) on the phase, microstructure and deposition rate of Y-Si-O films were investigated. At P_L<102W (T_dep<1140K), amorphous Y-Si-O films were obtained independent of P_tot. At P_tot=0.6kPa, mixture phase films of Y₂SiO₅ (the X1 phase) and Y₂Si₂O₇ (the α, α, α and y phases) were obtained at P_L=102W (T_dep=1210K), while single phase X1-Y₂SiO₅ films were prepared at P_L>139W (T_dep>1280K). Y₂Si₂O₇ mixture phase films were obtained at P_tot=3.5kPa and Y₂Si₂O₇ and Y₂SiO₅ (the X2 phase) mixture phase films were obtained at P_tot=7.5kPa independent of T_dep. Amorphous Y-Si-O films showed a dense, glassy microstructure. Faceted columnar grains grew on the Y-Si-O films at P_tot=0.6kPa, whereas rounded cauliflower-like grains grew at P_tot=7.5kPa. The R_dep increased with increasing P_L and T_dep and reached a maximum of 430αmh^α1 at P_tot=0.6kPa, P_L=186W and T_dep=1310K.