High-speed deposition of SiC thick film by halide precursor

Mingxu Han, Wei Zhou, Dingheng Zheng, Rong Tu, Song Zhang, Takashi Goto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Polycrystalline β-SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing Tdep. The maximum deposition rate (Rdep) of 1125 μm h-1 has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing Tdep.

Original languageEnglish
Title of host publicationAdvanced Ceramics and Novel Processing
PublisherTrans Tech Publications Ltd
Pages37-42
Number of pages6
ISBN (Print)9783038351306
DOIs
Publication statusPublished - 2014 Jan 1
Event5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China
Duration: 2013 Dec 92013 Dec 12

Publication series

NameKey Engineering Materials
Volume616
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

Other5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
CountryChina
CityWuhan
Period13/12/913/12/12

Keywords

  • Halide CVD
  • High-speed
  • β-SiC

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Han, M., Zhou, W., Zheng, D., Tu, R., Zhang, S., & Goto, T. (2014). High-speed deposition of SiC thick film by halide precursor. In Advanced Ceramics and Novel Processing (pp. 37-42). (Key Engineering Materials; Vol. 616). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.616.37