High-speed deposition of oriented TiNx films by laser metal-organic chemical vapor deposition

Yan Sheng Gong, Rong Tu, Takashi Goto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

TiNx films were prepared on Al2O3 substrates by laser chemical vapor deposition (LCVD). The effects of laser power (PL), pre-heatment temperature (Tpre) and total pressure in the main chamber (Ptot) on the orientation and deposition rate (Rdep) of TiNx films were investigated. The deposited TiNx films were characterized by X-ray diffraction (XRD), atomic emission spectrometry (AES) and field emission scanning electron microscope (FESEM). The results showed that the composition in TiNx films was uniform, and the orientation was relative to the Tpre, which changed from (111) to (200) orientation with increasing Tpre. The orientation was consistent with its microstructure. The Rdep of TiNx films increased with increasing PL, showing a maximum (90μm/h) at PL = 100W at a deposition area of about 300mm2, which was higher than that of TiNx films prepared by other methods.

Original languageEnglish
Pages (from-to)391-395
Number of pages5
JournalWuji Cailiao Xuebao/Journal of Inorganic Materials
Volume25
Issue number4
DOIs
Publication statusPublished - 2010 Apr 1

Keywords

  • High-speed deposition
  • Laser chemical vapor deposition (LCVD)
  • Orientation
  • TiN films

ASJC Scopus subject areas

  • Materials Science(all)
  • Inorganic Chemistry

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