High-speed damage-free contact hole etching using dual shower head microwave-excited high-density-plasma equipment

Tetsuya Goto, Hiroshi Yamauchi, Takeyoshi Kato, Masato Terasaki, Akinobu Teramoto, Masaki Hlrayama, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Dual shower head microwave-excited plasma etching equipment for separating the plasma-excited region from the etching process region has been developed. With the aim of realization of damage-free etching, the carrier activation of boron-doped p+-Si is investigated after plasma irradiation. The damage-free-etching mode in which holes do not deactivate was found. Contact holes are successfully etched using a surface damage-free etching process consisting of high-speed etching mode and surface damage-free etching mode. The damage-free-etching mode consists of low-self-bias condition and a low etching gas flow rate as compared with the high-speed mode. For both modes, the etcher can maintain the process uniformity because the etcher can control self-bias voltages without changing other process parameters.

Original languageEnglish
Pages (from-to)1784-1787
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Apr

Keywords

  • Carrier deactivations
  • Damage-free etching
  • Microwave-excited plasma
  • Reactive ion etching
  • Shower head
  • SiO etching

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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