High-speed and reliable domain wall motion device: Material design for embedded memory and logic application

S. Fukami, Michihiko Yamanouchi, T. Koyama, K. Ueda, Y. Yoshimura, K. J. Kim, D. Chiba, H. Honjo, N. Sakimura, R. Nebashi, Y. Kato, Y. Tsuji, A. Morioka, K. Kinoshita, S. Miura, T. Suzuki, H. Tanigawa, S. Ikeda, T. Sugibayashi, N. KasaiT. Ono, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

High-speed capability and excellent reliability of a magnetic domain wall (DW) motion device required for embedded memory and logic-in-memory applications were achieved by optimizing the film stack structure of Co/Ni wire. Low-current with high-speed writing, high heat resistance, low error rate, wide operation range for temperature and magnetic field, high retention, and high endurance features were confirmed.

Original languageEnglish
Title of host publication2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages61-62
Number of pages2
DOIs
Publication statusPublished - 2012 Sep 27
Event2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States
Duration: 2012 Jun 122012 Jun 14

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2012 Symposium on VLSI Technology, VLSIT 2012
CountryUnited States
CityHonolulu, HI
Period12/6/1212/6/14

Keywords

  • MRAM
  • logic-in-memory
  • magnetic domain wall

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High-speed and reliable domain wall motion device: Material design for embedded memory and logic application'. Together they form a unique fingerprint.

Cite this