High-speed and highly accurate evaluation of electrical characteristics in MOSFETs

Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test circuit, accurate and high speed measurement can be obtained. These numerous data of variability, noise, and leakage current caused by the defects in MOSFETs are very useful for the process development and constructing the device structures.

Original languageEnglish
Title of host publicationICICDT 2013 - International Conference on IC Design and Technology, Proceedings
Pages187-190
Number of pages4
DOIs
Publication statusPublished - 2013 Sep 9
Event2013 International Conference on IC Design and Technology, ICICDT 2013 - Pavia, Italy
Duration: 2013 May 292013 May 31

Publication series

NameICICDT 2013 - International Conference on IC Design and Technology, Proceedings

Other

Other2013 International Conference on IC Design and Technology, ICICDT 2013
CountryItaly
CityPavia
Period13/5/2913/5/31

Keywords

  • MOSFET
  • Random telegraph signal
  • V variability
  • leakage current
  • test circuit

ASJC Scopus subject areas

  • Hardware and Architecture

Fingerprint Dive into the research topics of 'High-speed and highly accurate evaluation of electrical characteristics in MOSFETs'. Together they form a unique fingerprint.

Cite this