High SNR CMOS S/H IC for multi-carrier direct RF under sampling receiver

Mizuki Motoyosh, Tomokazu Koizum, Takashi Maehata, Suguru Kameda, Noriharu Suematsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Direct RF under sampling reception has been developed to reduce the size and the power consumption of the terrestrial wireless terminals. The system is suitable for multi-carrier operation. Some sample and hold (S/H) IC was reported to operate in high frequency or wideband operation. However the signal-noise ratio (SNR) has limitation caused by output buffer. We proposed high SNR S/H circuit with small gain ripple at the MHz to GHz frequency band for multi-carrier reception. The proposed S/H IC is designed and fabricated in 90 nm CMOS process. The fabricated IC performs improving of the output power and SNR about 23Bm and 10dB, respectively. Moreover, the maximum frequency with S11 of less than -10dB is 11.5GHz.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
Publication statusPublished - 2016 Sep 27
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
Duration: 2016 Aug 242016 Aug 26

Publication series

NameRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Other

Other2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan, Province of China
CityTaipei
Period16/8/2416/8/26

Keywords

  • CMOS
  • Digital RF
  • RFIC
  • Sampling

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

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