High signal swing pass-transistor logic using Surrounding Gate Transistor

Tetsuo Endoh, Toshihiko Funaki, Hiroshi Sakuraba, Fujio Masuoka

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

In this paper a pass-transistor logic (PTL) using Surrounding Gate Transistor (SGT) is reported for the first time. This SGT-based PTL brings out the latent abilities of the PTL, especially improvement of the area occupation by 74% and the power-delay product by 70% at the supply voltage of IV compared to bulk MOSFET-based PTL.

Original languageEnglish
Pages273-275
Number of pages3
Publication statusPublished - 2000 Jan 1
EventInternational Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA
Duration: 2000 Sep 62000 Sep 8

Other

OtherInternational Conference on Simulation of Semiconductor Processes and Devices
CitySeattle, WA, USA
Period00/9/600/9/8

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Endoh, T., Funaki, T., Sakuraba, H., & Masuoka, F. (2000). High signal swing pass-transistor logic using Surrounding Gate Transistor. 273-275. Paper presented at International Conference on Simulation of Semiconductor Processes and Devices, Seattle, WA, USA, .