High-sensitivity photodetectors based on multilayer GaTe flakes

Fucai Liu, Hidekazu Shimotani, Hui Shang, Thangavel Kanagasekaran, Viktor Zólyomi, Neil Drummond, Vladimir I. Fal'Ko, Katsumi Tanigaki

Research output: Contribution to journalArticle

184 Citations (Scopus)

Abstract

Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm2 V-1 s-1. The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.

Original languageEnglish
Pages (from-to)752-760
Number of pages9
JournalACS Nano
Volume8
Issue number1
DOIs
Publication statusPublished - 2014 Jan 28

Keywords

  • gallium telluride
  • layered material
  • photodetector
  • responsivity
  • transistor

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Liu, F., Shimotani, H., Shang, H., Kanagasekaran, T., Zólyomi, V., Drummond, N., Fal'Ko, V. I., & Tanigaki, K. (2014). High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano, 8(1), 752-760. https://doi.org/10.1021/nn4054039