TY - JOUR
T1 - High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate
AU - Endo, Haruyuki
AU - Kikuchi, Michiko
AU - Ashioi, Masahumi
AU - Kashiwaba, Yasuhiro
AU - Hane, Kazuhiro
AU - Kashiwaba, Yasube
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/5
Y1 - 2008/5
N2 - A Pt/Mg0.59Zn0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg0.59Zn0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg0.59Zn0.41O film obtained from the spectral transmittance and reflectance, was 4.6eV. The fabricated photodiode consisted of an anti-reflection SiO2 film, semitransparent Schottky Pt electrode, Mg0.59Zn0.41O film, n+-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current-voltage characteristics, was 1.3. The maximum responslvity was 0.015 A/W at the wavelength of 220 nm.
AB - A Pt/Mg0.59Zn0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg0.59Zn0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg0.59Zn0.41O film obtained from the spectral transmittance and reflectance, was 4.6eV. The fabricated photodiode consisted of an anti-reflection SiO2 film, semitransparent Schottky Pt electrode, Mg0.59Zn0.41O film, n+-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current-voltage characteristics, was 1.3. The maximum responslvity was 0.015 A/W at the wavelength of 220 nm.
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U2 - 10.1143/APEX.1.051201
DO - 10.1143/APEX.1.051201
M3 - Article
AN - SCOPUS:57049105257
VL - 1
SP - 512011
EP - 512013
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 5
ER -