High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate

Haruyuki Endo; Michiko Kikuchi; Masahumi Ashioi; Yasuhiro Kashiwaba; Kazuhiro Hane; Yasube Kashiwaba

doi:10.1143/APEX.1.051201

High-sensitivity mid-ultraviolet Pt/Mg_0.59Zn_0.41O schottky photodiode on a ZnO single crystal substrate

Haruyuki Endo, Michiko Kikuchi, Masahumi Ashioi, Yasuhiro Kashiwaba, Kazuhiro Hane, Yasube Kashiwaba

ENG - Finemechanics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A Pt/Mg_0.59Zn_0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg_0.59Zn_0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg_0.59Zn_0.41O film obtained from the spectral transmittance and reflectance, was 4.6eV. The fabricated photodiode consisted of an anti-reflection SiO₂ film, semitransparent Schottky Pt electrode, Mg_0.59Zn_0.41O film, n⁺-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current-voltage characteristics, was 1.3. The maximum responslvity was 0.015 A/W at the wavelength of 220 nm.

Original language	English
Pages (from-to)	512011-512013
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	5
DOIs	https://doi.org/10.1143/APEX.1.051201
Publication status	Published - 2008 May

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate",

abstract = "A Pt/Mg0.59Zn0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg0.59Zn0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg0.59Zn0.41O film obtained from the spectral transmittance and reflectance, was 4.6eV. The fabricated photodiode consisted of an anti-reflection SiO2 film, semitransparent Schottky Pt electrode, Mg0.59Zn0.41O film, n+-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current-voltage characteristics, was 1.3. The maximum responslvity was 0.015 A/W at the wavelength of 220 nm.",

author = "Haruyuki Endo and Michiko Kikuchi and Masahumi Ashioi and Yasuhiro Kashiwaba and Kazuhiro Hane and Yasube Kashiwaba",

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T1 - High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate

AU - Endo, Haruyuki

AU - Kikuchi, Michiko

AU - Ashioi, Masahumi

AU - Kashiwaba, Yasuhiro

AU - Hane, Kazuhiro

AU - Kashiwaba, Yasube

PY - 2008/5

Y1 - 2008/5

N2 - A Pt/Mg0.59Zn0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg0.59Zn0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg0.59Zn0.41O film obtained from the spectral transmittance and reflectance, was 4.6eV. The fabricated photodiode consisted of an anti-reflection SiO2 film, semitransparent Schottky Pt electrode, Mg0.59Zn0.41O film, n+-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current-voltage characteristics, was 1.3. The maximum responslvity was 0.015 A/W at the wavelength of 220 nm.

AB - A Pt/Mg0.59Zn0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg0.59Zn0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg0.59Zn0.41O film obtained from the spectral transmittance and reflectance, was 4.6eV. The fabricated photodiode consisted of an anti-reflection SiO2 film, semitransparent Schottky Pt electrode, Mg0.59Zn0.41O film, n+-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current-voltage characteristics, was 1.3. The maximum responslvity was 0.015 A/W at the wavelength of 220 nm.

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