High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves

Akihide Hamano, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

THz imaging was performed in 2 s intervals with 1 mm resolution on a 3 in., 0.42 mm thick, as-cut n-type Silicon Carbide wafer. Carrier density, relaxation time, mobility, and resistivity obtained from imaging results are 0.91 × 1018 cm-3, 4.36 × 10-14 s, 218 cm2V-1s-1, and 3.14 × 10-2 Wcm, respectively. Compared with the standard values provided by the manufacturers, the results suggest that THz imaging has reliable precision and accuracy.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
EditorsHajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
PublisherTrans Tech Publications Ltd
Pages491-494
Number of pages4
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014 Jan 1
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 2013 Sep 292013 Oct 4

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

Keywords

  • Drude-lorentz model
  • Silicon carbide
  • Terahertz imaging

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Hamano, A., Ohno, S., Minamide, H., Ito, H., & Usuki, Y. (2014). High-sensitivity high-resolution full-wafer imaging of the properties of large n-type SiC using the relative reflectance of two terahertz waves. In H. Okumura, H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 491-494). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.491