High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation

M. G. House, I. Bartlett, P. Pakkiam, M. Koch, E. Peretz, J. Van Der Heijden, T. Kobayashi, S. Rogge, M. Y. Simmons

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report the development of a high-sensitivity semiconductor charge sensor based on a quantum dot coupled to a single lead designed to minimize the geometric requirements of a charge sensor for scalable quantum-computing architectures. The quantum dot is fabricated in Si:P using atomic precision lithography, and its charge transitions are measured with rf reflectometry. A second quantum dot with two leads placed 42 nm away serves as both a charge for the sensor to measure and as a conventional rf single-electron transistor (rf SET) with which to make a comparison of the charge-detection sensitivity. We demonstrate sensitivity equivalent to an integration time of 550 ns to detect a single charge with a signal-to-noise ratio of 1 compared with an integration time of 55 ns for the rf SET. This level of sensitivity is suitable for fast (<15 μs) single-spin readout in quantum-information applications, with a significantly reduced geometric footprint compared to the rf SET.

Original languageEnglish
Article number044016
JournalPhysical Review Applied
Volume6
Issue number4
DOIs
Publication statusPublished - 2016 Oct 25

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    House, M. G., Bartlett, I., Pakkiam, P., Koch, M., Peretz, E., Van Der Heijden, J., Kobayashi, T., Rogge, S., & Simmons, M. Y. (2016). High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation. Physical Review Applied, 6(4), [044016]. https://doi.org/10.1103/PhysRevApplied.6.044016