High sensitivity and high readout speed electron beam detector using steep pn junction Si diode for low acceleration voltage

Yasumasa Koda, Rihito Kuroda, Masaya Hara, Hiroyuki Tsunoda, Shigetoshi Sugawa

Research output: Contribution to journalConference article

Abstract

In this work, Si pn junction diode-based electron beam detector with high sensitivity for low acceleration voltage and high readout speed is reported, by using steep pn junction formation technology, low dopant concentration Si substrate and multiple signal outputs. The electron quantum efficiency of fabricated detector at acceleration voltage of 1.0kV, 10kV, 20kV are 51.8%, 70.3% and 90.8%, respectively, which is suitable for low acceleration voltage scanning electron microscope. Also, by dividing the detector area into multiple regions, the pn junction capacitance is significantly reduced to 1/3 and 1/7 compared to the conventional structure, which is suitable for high signal readout speed that is limited by RC delay of pn junction.

Original languageEnglish
Pages (from-to)14-17
Number of pages4
JournalIS and T International Symposium on Electronic Imaging Science and Technology
DOIs
Publication statusPublished - 2017 Jan 1
EventImage Sensors and Imaging Systems 2017, IMSE 2017 - Burlingame, United States
Duration: 2017 Jan 292017 Feb 2

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications
  • Human-Computer Interaction
  • Software
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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