High-selectivity reactive ion etching with CO/NH3/Xe gas for micro/nanostructuring of 20%Fe-Ni, Au, Pt, and Cu

Takashi Abe, Youn Gi Hong, Masayoshi Esashi

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

Highly selective etch process for conductive metals (Au, Pt, and Cu) and magnetic metal (20%Fe-Ni) has been developed on a magnetron reactive ion etching system which uses a CO/NH3/Xe chemistry. Etch selectivities of these metals to titanium greater than 80:1 for Au, 40:1 for Pt, 30:1 for Cu, and 15:1 for Permalloy (20%Fe-Ni) were achieved at a titanium etch rate of 1.0 nm/min. These etchings were carried out at a room temperature. We found out that a little addition of Xe to CO/NH3 gases (molar ratio =1/7) shows both ion assist etching of these metals and nitridation of titanium mask thus resulting in the good selectivity. These etch selectivities were enhanced about three times greater than that obtained without Xe.

Original languageEnglish
Pages574-577
Number of pages4
Publication statusPublished - 2003 Jul 23
EventIEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems - Kyoto, Japan
Duration: 2003 Jan 192003 Jan 23

Other

OtherIEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems
Country/TerritoryJapan
CityKyoto
Period03/1/1903/1/23

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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