High resolution X-ray photoelectron spectroscopy study on Si 3N4/Si interface structures and its correlation with hysteresis in C-V curves

M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K. Kobayashi, T. Hattori, S. Sugawa, T. Ohmi

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The structure and the electrical property of Si3N4 grown by NH* in microwave excited high density plasma is studied. The sub-nitrides measured by XPS consist of Si+, Si2+ and Si3+. The total amount of sub-nitrides is 1.29 ML. An abrupt compositional transition is appeared at Si3N4/Si interface. The C-V characteristics of the silicon nitrides formed at 400°C and 600°C are compared with the total amount of sub-nitrides in each silicon nitride. Hysteresis in the C-V curve of the MIS capacitor having the Si 3N4 grown at 400°C is observed after 600°C annealing accompanied by the increase of sub-nitrides. However, hysteresis and the increase of sub-nitrides after annealing are not appeared in the Si 3N4 grown at 600°C.

Original languageEnglish
Pages (from-to)267-276
Number of pages10
JournalECS Transactions
Volume1
Issue number1
Publication statusPublished - 2005
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 20

ASJC Scopus subject areas

  • Engineering(all)

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