The structure and the electrical property of Si3N4 grown by NH* in microwave excited high density plasma is studied. The sub-nitrides measured by XPS consist of Si+, Si2+ and Si3+. The total amount of sub-nitrides is 1.29 ML. An abrupt compositional transition is appeared at Si3N4/Si interface. The C-V characteristics of the silicon nitrides formed at 400°C and 600°C are compared with the total amount of sub-nitrides in each silicon nitride. Hysteresis in the C-V curve of the MIS capacitor having the Si 3N4 grown at 400°C is observed after 600°C annealing accompanied by the increase of sub-nitrides. However, hysteresis and the increase of sub-nitrides after annealing are not appeared in the Si 3N4 grown at 600°C.
|Number of pages||10|
|Publication status||Published - 2005|
|Event||5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: 2005 Oct 16 → 2005 Oct 20
ASJC Scopus subject areas