High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces

Christine Marie Montesa; Naoya Shibata; Si Young Choi; Hiroshi Tonomura; Kazuhiro Akiyama; Yoshirou Kuromitsu; Yuichi Ikuhara

doi:10.2320/matertrans.MC200810

High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces

Christine Marie Montesa, Naoya Shibata, Si Young Choi, Hiroshi Tonomura, Kazuhiro Akiyama, Yoshirou Kuromitsu, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this paper, we characterized aluminum/sapphire interface structure by using high-resolution transmission electron microscopy. It was found that step structures of sapphire formed at the aluminum/sapphire interfaces during the liquid-phase bonding. It was discovered that the addition of silicon in aluminum significantly reduces the step growth at the interface. Silicon was found to segregate and precipitate at the interface. These results suggest that the strong preference of silicon at the interface may inhibit the step growth reactions during liquid-phase bonding.

Original language	English
Pages (from-to)	1037-1040
Number of pages	4
Journal	Materials Transactions
Volume	50
Issue number	5
DOIs	https://doi.org/10.2320/matertrans.MC200810
Publication status	Published - 2009 May

Keywords

High resolution transmission electron microscopy
Liquid phase bonding
Metal/ceramic hetero interface
Segregation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.MC200810

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High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces. / Montesa, Christine Marie; Shibata, Naoya; Choi, Si Young; Tonomura, Hiroshi; Akiyama, Kazuhiro; Kuromitsu, Yoshirou; Ikuhara, Yuichi.

In: Materials Transactions, Vol. 50, No. 5, 05.2009, p. 1037-1040.

Research output: Contribution to journal › Article › peer-review

@article{6dd4c24a756e49dc9446f65ae32323b2,

title = "High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces",

abstract = "In this paper, we characterized aluminum/sapphire interface structure by using high-resolution transmission electron microscopy. It was found that step structures of sapphire formed at the aluminum/sapphire interfaces during the liquid-phase bonding. It was discovered that the addition of silicon in aluminum significantly reduces the step growth at the interface. Silicon was found to segregate and precipitate at the interface. These results suggest that the strong preference of silicon at the interface may inhibit the step growth reactions during liquid-phase bonding.",

keywords = "High resolution transmission electron microscopy, Liquid phase bonding, Metal/ceramic hetero interface, Segregation",

author = "Montesa, {Christine Marie} and Naoya Shibata and Choi, {Si Young} and Hiroshi Tonomura and Kazuhiro Akiyama and Yoshirou Kuromitsu and Yuichi Ikuhara",

year = "2009",

month = may,

doi = "10.2320/matertrans.MC200810",

language = "English",

volume = "50",

pages = "1037--1040",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "5",

}

TY - JOUR

T1 - High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces

AU - Montesa, Christine Marie

AU - Shibata, Naoya

AU - Choi, Si Young

AU - Tonomura, Hiroshi

AU - Akiyama, Kazuhiro

AU - Kuromitsu, Yoshirou

AU - Ikuhara, Yuichi

PY - 2009/5

Y1 - 2009/5

N2 - In this paper, we characterized aluminum/sapphire interface structure by using high-resolution transmission electron microscopy. It was found that step structures of sapphire formed at the aluminum/sapphire interfaces during the liquid-phase bonding. It was discovered that the addition of silicon in aluminum significantly reduces the step growth at the interface. Silicon was found to segregate and precipitate at the interface. These results suggest that the strong preference of silicon at the interface may inhibit the step growth reactions during liquid-phase bonding.

AB - In this paper, we characterized aluminum/sapphire interface structure by using high-resolution transmission electron microscopy. It was found that step structures of sapphire formed at the aluminum/sapphire interfaces during the liquid-phase bonding. It was discovered that the addition of silicon in aluminum significantly reduces the step growth at the interface. Silicon was found to segregate and precipitate at the interface. These results suggest that the strong preference of silicon at the interface may inhibit the step growth reactions during liquid-phase bonding.

KW - High resolution transmission electron microscopy

KW - Liquid phase bonding

KW - Metal/ceramic hetero interface

KW - Segregation

UR - http://www.scopus.com/inward/record.url?scp=67650475905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650475905&partnerID=8YFLogxK

U2 - 10.2320/matertrans.MC200810

DO - 10.2320/matertrans.MC200810

M3 - Article

AN - SCOPUS:67650475905

VL - 50

SP - 1037

EP - 1040

JO - Materials Transactions

JF - Materials Transactions

SN - 1345-9678

IS - 5

ER -

High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces

Abstract

Keywords

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