Abstract
We have developed a high resolution time-of-flight (TOF) electron spectrometer. To attain the high resolution, a new high speed electron gate was developed for precise flight time measurement. The time resolution of this gate improves for slow electrons and it is a few hundred picoseconds for an electron beam of a few eV. To evaluate the performance of the TOF spectrometer, we have measured the energy distribution of electrons emitted from NEA GaAs irradiated by a 820 nm GaAlAs laser with a 60 ps pulse width. The spectrometer including the gate works as intended and the highest resolution achieved is 3 meV for the electron flight energy of 3 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 2858-2863 |
| Number of pages | 6 |
| Journal | Japanese journal of applied physics |
| Volume | 29 |
| Issue number | 12R |
| DOIs | |
| Publication status | Published - 1990 Dec |
Keywords
- High resolution electron spectrometer
- NEA electron emitter
- TOF
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Ushiroku, T., Uehara, Y., Ushioda, S., & Murata, Y. (1990). High resolution time-of-flight electron spectrometer. Japanese journal of applied physics, 29(12R), 2858-2863. https://doi.org/10.1143/JJAP.29.2858