High resolution time-of-flight electron spectrometer

We have developed a high resolution time-of-flight (TOF) electron spectrometer. To attain the high resolution, a new high speed electron gate was developed for precise flight time measurement. The time resolution of this gate improves for slow electrons and it is a few hundred picoseconds for an electron beam of a few eV. To evaluate the performance of the TOF spectrometer, we have measured the energy distribution of electrons emitted from NEA GaAs irradiated by a 820 nm GaAlAs laser with a 60 ps pulse width. The spectrometer including the gate works as intended and the highest resolution achieved is 3 meV for the electron flight energy of 3 eV.