High resolution time-of-flight electron spectrometer

Tadamasa Ushiroku, Yoichi Uehara, Sukekatsu Ushioda, Yoshitada Murata

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have developed a high resolution time-of-flight (TOF) electron spectrometer. To attain the high resolution, a new high speed electron gate was developed for precise flight time measurement. The time resolution of this gate improves for slow electrons and it is a few hundred picoseconds for an electron beam of a few eV. To evaluate the performance of the TOF spectrometer, we have measured the energy distribution of electrons emitted from NEA GaAs irradiated by a 820 nm GaAlAs laser with a 60 ps pulse width. The spectrometer including the gate works as intended and the highest resolution achieved is 3 meV for the electron flight energy of 3 eV.

Original languageEnglish
Pages (from-to)2858-2863
Number of pages6
JournalJapanese journal of applied physics
Volume29
Issue number12R
DOIs
Publication statusPublished - 1990 Dec

Keywords

  • High resolution electron spectrometer
  • NEA electron emitter
  • TOF

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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