## Abstract

We have performed high-resolution Ce (formula presented) resonance photoemission (RPES) measurements for low Kondo temperature (formula presented) (formula presented) (formula presented) and compared the results with (formula presented) RPES. The experimental results reveal that the bulk Ce (formula presented) electronic structures are remarkably different from those in the surface layer even in low-(formula presented) materials. The non-(formula presented) valence-band spectra are well described by the results of the band-structure calculation of isostructural (formula presented) by considering the photoionization cross sections. We have analyzed the Ce (formula presented) spectra by using a noncrossing approximation calculation based on the single-impurity Anderson model. The calculated results successfully reproduce the experimental (formula presented) spectra. We find that the bare (formula presented) level shift is the most important factor in explaining the difference between the surface and bulk Ce (formula presented) spectra. Moreover, the Ce (formula presented) states of (formula presented) are found to hybridize preferentially with a particular part of the p-d mixed antibonding states.

Original language | English |
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Pages (from-to) | 1-9 |

Number of pages | 9 |

Journal | Physical Review B - Condensed Matter and Materials Physics |

Volume | 65 |

Issue number | 19 |

DOIs | |

Publication status | Published - 2002 |

## ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics