High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy

Yuji Yamagishi, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by local deep level transient spectroscopy based on time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.

Original languageEnglish
Title of host publication2019 IEEE International Reliability Physics Symposium, IRPS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538695043
DOIs
Publication statusPublished - 2019 May 22
Event2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States
Duration: 2019 Mar 312019 Apr 4

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2019-March
ISSN (Print)1541-7026

Conference

Conference2019 IEEE International Reliability Physics Symposium, IRPS 2019
CountryUnited States
CityMonterey
Period19/3/3119/4/4

Keywords

  • Density of interface states
  • Local deep level transient spectroscopy
  • SiO/SiC MOS interface
  • Time-resolved scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Engineering(all)

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