High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy

Y. Yamagishi, Y. Cho

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometres, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.

Original languageEnglish
Pages (from-to)242-245
Number of pages4
JournalMicroelectronics Reliability
Volume88-90
DOIs
Publication statusPublished - 2018 Sep

Keywords

  • Deep level transient spectroscopy
  • Interface states
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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