High resolution mapping of defects at SiO2/SiC interfaces by local-DLTS based on time-resolved scanning nonlinear dielectric microscopy

Yuji Yamagishi, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High resolution observation of density of interface states (Hit) at SiO2/4H-SiC interfaces was performed by local deep level transient spectroscopy based on time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.

Original languageEnglish
Title of host publication26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728135526
DOIs
Publication statusPublished - 2019 Jul
Event26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 - Hangzhou, China
Duration: 2019 Jul 22019 Jul 5

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
CountryChina
CityHangzhou
Period19/7/219/7/5

Keywords

  • Density of interface states
  • Local deep level transient spectroscopy
  • SiO/SiC MOS interface
  • Time-resolved scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Yamagishi, Y., & Cho, Y. (2019). High resolution mapping of defects at SiO2/SiC interfaces by local-DLTS based on time-resolved scanning nonlinear dielectric microscopy. In 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 [8984905] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA47161.2019.8984905