High resolution LAPS using amorphous silicon as the semiconductor material

Werner Moritz; Tatsuo Yoshinobu; Friedhelm Finger; Steffi Krause; Marisa Martin-Fernandez; Michael J. Schöning

doi:10.1016/j.snb.2004.04.073

High resolution LAPS using amorphous silicon as the semiconductor material

Werner Moritz, Tatsuo Yoshinobu, Friedhelm Finger, Steffi Krause, Marisa Martin-Fernandez, Michael J. Schöning

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.

Original language	English
Pages (from-to)	436-441
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	103
Issue number	1-2
DOIs	https://doi.org/10.1016/j.snb.2004.04.073
Publication status	Published - 2004 Sep 29
Externally published	Yes

Keywords

Amorphous Si
LAPS
Photocurrent
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2004.04.073

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AU - Moritz, Werner

AU - Yoshinobu, Tatsuo

AU - Finger, Friedhelm

AU - Krause, Steffi

AU - Martin-Fernandez, Marisa

AU - Schöning, Michael J.

PY - 2004/9/29

Y1 - 2004/9/29

N2 - The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.

AB - The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.

KW - Amorphous Si

KW - LAPS

KW - Photocurrent

KW - Semiconductor

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High resolution LAPS using amorphous silicon as the semiconductor material

Abstract

Keywords

ASJC Scopus subject areas

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