Abstract
The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.
Original language | English |
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Pages (from-to) | 436-441 |
Number of pages | 6 |
Journal | Sensors and Actuators, B: Chemical |
Volume | 103 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2004 Sep 29 |
Externally published | Yes |
Keywords
- Amorphous Si
- LAPS
- Photocurrent
- Semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry