Abstract
The lateral resolution of photocurrent techniques such as light-addressable potentiometric sensors (LAPS) or scanning photo-induced impedance microscopy (SPIM) is limited by the properties of the semiconductor material used. We investigated metal-insulator-semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass substrates. It was shown that a sub-micrometer resolution can be achieved for this material, which is much better than the results for single crystalline Si. Some limitations caused by light scattering in the structure were observed.
| Original language | English |
|---|---|
| Pages (from-to) | 436-441 |
| Number of pages | 6 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 103 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2004 Sep 29 |
Keywords
- Amorphous Si
- LAPS
- Photocurrent
- Semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Moritz, W., Yoshinobu, T., Finger, F., Krause, S., Martin-Fernandez, M., & Schöning, M. J. (2004). High resolution LAPS using amorphous silicon as the semiconductor material. Sensors and Actuators, B: Chemical, 103(1-2), 436-441. https://doi.org/10.1016/j.snb.2004.04.073