High-resolution in situ electron microscopy of a silicon surface modification by molten aluminum at high temperatures

S. Tsukimoto, S. Arai, H. Saka

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    High-resolution in situ heating experiments in a transmission electron microscope have been applied to a study of the surface modification of Si by molten Al in a vacuum of 1×10-5 Pa. Transformation from an atomically rough to an atomically flat surface was induced by wetting of molten Al atoms. Si {110}, {112}, {115} and {773} surfaces show sawtooth-like structures composed of nanofacets. It is concluded that molten Al atoms remove a native amorphous oxide layer which existed on the original Si surface, making the surface `clean' even in a non-ultra-high vacuum such as 10-5 Pa.

    Original languageEnglish
    Pages (from-to)913-918
    Number of pages6
    JournalPhilosophical Magazine Letters
    Volume79
    Issue number12
    DOIs
    Publication statusPublished - 1999 Dec 1

    ASJC Scopus subject areas

    • Condensed Matter Physics

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