High resolution imaging of electrical properties of a 2-inch-diameter gallium nitride wafer using frequency-agile terahertz waves

Akihide Hamano, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The reflective spectra of n-type gallium nitride (GaN) samples with various carrier concentrations have been measured in the terahertz region. We observed the different reflective spectra by changing the carrier concentration. The Drude Lorentz model explained well the measured spectra influenced by free carrier effects. In order to obtain electrical properties of the carrier concentration, mobility, and electrical resistivity, we used two terahertz waves generated by a frequency-agile source. Image mapping of these electrical properties on a 2-in.-diameter GaN wafer was demonstrated with a high resolution of 1 × 1 mm2.

Original languageEnglish
Article number022402
JournalJapanese journal of applied physics
Volume49
Issue number2 Part 1
DOIs
Publication statusPublished - 2010 Feb 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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