Scanning nonlinear dielectric microscopy (SNDM) can evaluate carrier or charge distribution in semiconductor devices. High sensitivity to capacitance variation enables SNDM to measure the super-high-order (higher than 3rd) derivative of local capacitance-voltage (C-V) characteristics directly under the tip (dnC/dVn,n = 3, 4, ...). We demonstrate improvement of carrier density resolution by measurement of dnC/dVn,n = 1, 2, 3, 4 (super-higher-order method) in the cross-sectional observation of metal-oxide-semiconductor field-effect-transistor.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2013|
|Event||18th Microscopy of Semiconducting Materials Conference, MSM 2013 - Oxford, United Kingdom|
Duration: 2013 Apr 7 → 2013 Apr 11
ASJC Scopus subject areas
- Physics and Astronomy(all)