High resolution imaging in cross-section of a metal-oxide-semiconductor field-effect-transistor using super-higher-order nonlinear dielectric microscopy

N. Chinone, K. Yamasue, K. Honda, Y. Cho

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Scanning nonlinear dielectric microscopy (SNDM) can evaluate carrier or charge distribution in semiconductor devices. High sensitivity to capacitance variation enables SNDM to measure the super-high-order (higher than 3rd) derivative of local capacitance-voltage (C-V) characteristics directly under the tip (dnC/dVn,n = 3, 4, ...). We demonstrate improvement of carrier density resolution by measurement of dnC/dVn,n = 1, 2, 3, 4 (super-higher-order method) in the cross-sectional observation of metal-oxide-semiconductor field-effect-transistor.

Original languageEnglish
Article number012023
JournalJournal of Physics: Conference Series
Volume471
Issue number1
DOIs
Publication statusPublished - 2013
Event18th Microscopy of Semiconducting Materials Conference, MSM 2013 - Oxford, United Kingdom
Duration: 2013 Apr 72013 Apr 11

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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