High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, S. Zaima

    Research output: Contribution to journalArticlepeer-review

    342 Citations (Scopus)

    Abstract

    High-resolution X-ray photoelectron spectroscopy at 6 keV photon energy was realized by utilizing high-flux-density x rays from the third-generation high-energy synchrotron radiation facility, SPring-8. The method was applied to high-k HfO2/interlayer/Si complementary metal oxide superconductor gate-dielectric structures. Results indicated that SiOxNy as an interlayer was more effective in controlling the interface structure than SiO2.

    Original languageEnglish
    Pages (from-to)1005-1007
    Number of pages3
    JournalApplied Physics Letters
    Volume83
    Issue number5
    DOIs
    Publication statusPublished - 2003 Aug 4

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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