Abstract
High-resolution X-ray photoelectron spectroscopy at 6 keV photon energy was realized by utilizing high-flux-density x rays from the third-generation high-energy synchrotron radiation facility, SPring-8. The method was applied to high-k HfO2/interlayer/Si complementary metal oxide superconductor gate-dielectric structures. Results indicated that SiOxNy as an interlayer was more effective in controlling the interface structure than SiO2.
Original language | English |
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Pages (from-to) | 1005-1007 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2003 Aug 4 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)