High resolution electron microscopy study in ZrC-doped WC-12mass%co alloys

Y. Yamanaka, T. Taniuchi, F. Shirase, T. Tanase, Y. Ikuhara, T. Yamamoto

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    5 Citations (Scopus)


    Microstructures in ZrC-doped WC-Co alloys, which were prepared by liquid-phase and solid-phase sintering, were investigated mainly by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectrometry (EDS). HRTEM study has revealed that multi facet structures, which are often observed in VC-doped alloys, were not formed in ZrC-doped alloys. In addition, the segregation of Zr at WC/Co interfaces could not be detected by EDS analysis even with nano size electron probe. Doped ZrC was found to exist as other carbide grains without dissolving into γ-phase, i.e., Co phase by EDS-mapping performed for liquid-phase sintered alloys. In the case of liquid-phase sintering, the inhibition effect for the grain growth caused by ZrC-doping was confirmed to be very small as previously reported. In contrast, it was found that ZrC-doping largely retards WC grain growth in the case of solid-phase sintering. The retardation of WC grain growth observed in solid-phase sintered alloys was considered to be closely related to a low sinterbility due to a low wettability between Co and ZrC.

    Original languageEnglish
    Pages (from-to)1096-1101
    Number of pages6
    JournalMaterials Transactions
    Issue number5
    Publication statusPublished - 2009 May 1


    • Cemented carbides
    • Energy dispersive X-ray spectrometry (EDS)
    • Grain growth
    • High-resolution transmission electron microscopy (HRTEM)
    • ZrC

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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  • Cite this

    Yamanaka, Y., Taniuchi, T., Shirase, F., Tanase, T., Ikuhara, Y., & Yamamoto, T. (2009). High resolution electron microscopy study in ZrC-doped WC-12mass%co alloys. Materials Transactions, 50(5), 1096-1101. https://doi.org/10.2320/matertrans.MC200826