Abstract
The structural analyses of the defects for ZnO films on (011̄2) r-plane LiTaO3 substrate were carried out using electron diffraction, high-resolution electron microscopy (HREM), and image simulations. The epitaxial relationship was found to be [0001]ZnO|[01̄11]LiTaO3 and (112̄0)ZnO||(011̄2)LiTaO3. The dominant defects observed in the ZnO films were characterized as the type I1 intrinsic stacking faults with the displacement vector (a/6)[202̄3], leading to a local zinc-blende structure in the wurtzite ZnO matrix. HREM studies show that stacking faults in the ZnO film may be formed to accommodate tilting of the films as required to maintain a particular epitaxial relationship with respect to the substrate.
Original language | English |
---|---|
Pages (from-to) | S165-S169 |
Journal | Journal of Electron Microscopy |
Volume | 51 |
Issue number | SUPPL. |
DOIs | |
Publication status | Published - 2002 Jan 1 |
Keywords
- Computer simulation
- High-resolution electron microscopy
- Stacking fault
- ZnO
ASJC Scopus subject areas
- Instrumentation