High-resolution electron microscopy of stacking faults in heteroepitaxial ZnO/LiTaO3

S. H. Lim, D. Shindo

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    8 Citations (Scopus)

    Abstract

    The structural analyses of the defects for ZnO films on (011̄2) r-plane LiTaO3 substrate were carried out using electron diffraction, high-resolution electron microscopy (HREM), and image simulations. The epitaxial relationship was found to be [0001]ZnO|[01̄11]LiTaO3 and (112̄0)ZnO||(011̄2)LiTaO3. The dominant defects observed in the ZnO films were characterized as the type I1 intrinsic stacking faults with the displacement vector (a/6)[202̄3], leading to a local zinc-blende structure in the wurtzite ZnO matrix. HREM studies show that stacking faults in the ZnO film may be formed to accommodate tilting of the films as required to maintain a particular epitaxial relationship with respect to the substrate.

    Original languageEnglish
    Pages (from-to)S165-S169
    JournalJournal of Electron Microscopy
    Volume51
    Issue numberSUPPL.
    DOIs
    Publication statusPublished - 2002 Jan 1

    Keywords

    • Computer simulation
    • High-resolution electron microscopy
    • Stacking fault
    • ZnO

    ASJC Scopus subject areas

    • Instrumentation

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