High-resolution electron microscopy of short-range ordered structure of Ga0.5In0.5P

Daisuke Shindo, Kenji Hiraga, Sumio Iijima, Junichi Kudoh, Yoshiaki Nemoto, Tetsuo Oikawa

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A short-range ordered structure of a semiconductor laser material Gao.5Ino.5P was investigated by high-resolution electron microscopy together with electron diffraction. A high-resolution electron microscope image of Ga0.5In0.5P was processed to visualize a short-range ordered atomic arrangement. A model of the short-range ordered structure was obtained by assuming the proportionality between the brightness of white dots in the image and the concentration of In in atomic columns parallel to the incident electron beam. Based on the structure model, diffuse scattering intensity was calculated and it was compared with the observed diffraction pattern.

Original languageEnglish
Pages (from-to)227-230
Number of pages4
JournalJournal of Electron Microscopy
Volume42
Issue number4
Publication statusPublished - 1993 Aug 1

Keywords

  • Diffuse scattering
  • Ga-In-P
  • HREM image
  • Image processing
  • Imaging plate

ASJC Scopus subject areas

  • Instrumentation

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    Shindo, D., Hiraga, K., Iijima, S., Kudoh, J., Nemoto, Y., & Oikawa, T. (1993). High-resolution electron microscopy of short-range ordered structure of Ga0.5In0.5P. Journal of Electron Microscopy, 42(4), 227-230.