Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.
|Number of pages||6|
|Journal||Journal de physique. Colloque|
|Publication status||Published - 1990|
|Event||Proceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials - Paris, Fr|
Duration: 1989 Sep 4 → 1989 Sep 8
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