High resolution electron microscopy of interfaces in CVD β-SiC

S. Hagege, D. Shindo, K. Hiraga, M. Hirabayashi

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.

Original languageEnglish
Pages (from-to)167-172
Number of pages6
JournalJournal de physique. Colloque
VolumeC1
Issue number1
Publication statusPublished - 1990
EventProceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials - Paris, Fr
Duration: 1989 Sep 41989 Sep 8

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Hagege, S., Shindo, D., Hiraga, K., & Hirabayashi, M. (1990). High resolution electron microscopy of interfaces in CVD β-SiC. Journal de physique. Colloque, C1(1), 167-172.