High resolution electron microscopy of interfaces in CVD β-SiC

S. Hagege; D. Shindo; K. Hiraga; M. Hirabayashi

High resolution electron microscopy of interfaces in CVD β-SiC

S. Hagege, D. Shindo, K. Hiraga, M. Hirabayashi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.

Original language	English
Pages (from-to)	167-172
Number of pages	6
Journal	Journal de physique. Colloque
Volume	C1
Issue number	1
Publication status	Published - 1990
Event	Proceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials - Paris, Fr Duration: 1989 Sep 4 → 1989 Sep 8

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "High resolution electron microscopy of interfaces in CVD β-SiC",

abstract = "Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.",

author = "S. Hagege and D. Shindo and K. Hiraga and M. Hirabayashi",

year = "1990",

language = "English",

volume = "C1",

pages = "167--172",

journal = "European Physical Journal: Special Topics",

issn = "1951-6355",

publisher = "Springer Verlag",

number = "1",

note = "Proceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials ; Conference date: 04-09-1989 Through 08-09-1989",

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TY - JOUR

T1 - High resolution electron microscopy of interfaces in CVD β-SiC

AU - Hagege, S.

AU - Shindo, D.

AU - Hiraga, K.

AU - Hirabayashi, M.

PY - 1990

Y1 - 1990

N2 - Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.

AB - Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.

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M3 - Conference article

AN - SCOPUS:0025227001

VL - C1

SP - 167

EP - 172

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

SN - 1951-6355

IS - 1

T2 - Proceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials

Y2 - 4 September 1989 through 8 September 1989

ER -

High resolution electron microscopy of interfaces in CVD β-SiC

Abstract

ASJC Scopus subject areas

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