Abstract
Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.
| Original language | English |
|---|---|
| Pages (from-to) | 167-172 |
| Number of pages | 6 |
| Journal | Journal de physique. Colloque |
| Volume | C1 |
| Issue number | 1 |
| Publication status | Published - 1990 |
| Event | Proceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials - Paris, Fr Duration: 1989 Sep 4 → 1989 Sep 8 |
ASJC Scopus subject areas
- Engineering(all)
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Hagege, S., Shindo, D., Hiraga, K., & Hirabayashi, M. (1990). High resolution electron microscopy of interfaces in CVD β-SiC. Journal de physique. Colloque, C1(1), 167-172.