High resolution electron microscopy of interfaces in CVD β-SiC

S. Hagege, D. Shindo, K. Hiraga, M. Hirabayashi

    Research output: Contribution to journalConference articlepeer-review

    5 Citations (Scopus)


    Interfaces in CVD β-SiC have been analysed by high resolution electron microscopy. Models for the atomic structure of stacking faults, ∑3 and ∑9 twins in β SiC structure have been derived from the geometric approach of coincidence grain boundaries and symmetry considerations. These models have been checked and compared to the experimental results through high resolution image simulation.

    Original languageEnglish
    Pages (from-to)167-172
    Number of pages6
    JournalJournal de physique. Colloque
    Issue number1
    Publication statusPublished - 1990
    EventProceedings of the International Congress 1989: Intergranular and Interphase Boundaries in Materials - Paris, Fr
    Duration: 1989 Sep 41989 Sep 8

    ASJC Scopus subject areas

    • Engineering(all)


    Dive into the research topics of 'High resolution electron microscopy of interfaces in CVD β-SiC'. Together they form a unique fingerprint.

    Cite this