Abstract
The authors propose a new silicone based negative resist (SNR) for a high resolution double layer resist system. SNR shows high sensitivity to an e-beam, D//0//. //5 equals 5 mu mC/cm**2, with high contrast gamma equals 2, and excellent resistance to reactive ion etching under oxygen gas. A submicron pattern with a high aspect ratio can be easily fabricated with the SNR/AZ double layer resist system. It is also shown that submicron lithography can be accomplished on a substrate with topographic features.
| Original language | English |
|---|---|
| Pages (from-to) | 659-660 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 22 |
| Issue number | 10 |
| Publication status | Published - 1983 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Cite this
Morita, M., Tanaka, A., Imamura, S., Tamamura, T., & Kogure, O. (1983). HIGH RESOLUTION DOUBLE LAYER RESIST SYSTEM USING NEW SILICONE BASED NEGATIVE RESIST (SNR). Japanese Journal of Applied Physics, Part 2: Letters, 22(10), 659-660.