The authors propose a new silicone based negative resist (SNR) for a high resolution double layer resist system. SNR shows high sensitivity to an e-beam, D//0//. //5 equals 5 mu mC/cm**2, with high contrast gamma equals 2, and excellent resistance to reactive ion etching under oxygen gas. A submicron pattern with a high aspect ratio can be easily fabricated with the SNR/AZ double layer resist system. It is also shown that submicron lithography can be accomplished on a substrate with topographic features.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 1983 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)