HIGH RESOLUTION DOUBLE LAYER RESIST SYSTEM USING NEW SILICONE BASED NEGATIVE RESIST (SNR).

Masao Morita, Akinobu Tanaka, Saburo Imamura, Toshiaki Tamamura, Osamu Kogure

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The authors propose a new silicone based negative resist (SNR) for a high resolution double layer resist system. SNR shows high sensitivity to an e-beam, D//0//. //5 equals 5 mu mC/cm**2, with high contrast gamma equals 2, and excellent resistance to reactive ion etching under oxygen gas. A submicron pattern with a high aspect ratio can be easily fabricated with the SNR/AZ double layer resist system. It is also shown that submicron lithography can be accomplished on a substrate with topographic features.

Original languageEnglish
Pages (from-to)659-660
Number of pages2
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume22
Issue number10
Publication statusPublished - 1983 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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