High-resolution angle-resolved photoemission study of quasi-one-dimensional semiconductor In4Se3

Keisuke Fukutani, Yasunari Miyata, Idea Matsuzaki, Pavlo V. Galiy, Peter A. Dowben, Takafumi Sato, Takashi Takahashi

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11 Citations (Scopus)


We present a comprehensive characterization of the electronic structure of anisotropic layered semiconductor In4Se3 by means of high-resolution angle-resolved photoemission spectroscopy. Our study reveals the quasi-one-dimensionality in the electronic structure of In4Se3 and provides a direct estimate of its band gap (0.86 ± 0.05 eV). The identification of the quasi-one-dimensional electronic structure gives new insights into the electronic contribution to the high thermoelectric figure of merit of In4Se3.

Original languageEnglish
Article number074710
Journaljournal of the physical society of japan
Issue number7
Publication statusPublished - 2015 Jul 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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