High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs

K. W. Lee, J. C. Bea, T. Fukushima, Y. Ohara, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

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Engineering & Materials Science