High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs

K. W. Lee, J. C. Bea, T. Fukushima, Y. Ohara, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The influence of Cu contamination from Cu through-silicon via (TSV) on device reliability in the 3-D LSI was electrically evaluated by capacitance-time (C-t) measurement. The Cu/Ta gate trench capacitors with two types of Ta barrier layers of 10-nm and 100-nm thicknesses (at the surface) were fabricated. The C-t curves of the trench capacitors with 10-nm thick Ta layer were severely degraded even after the initial annealing for 5 min at 300°C. It means that Cu atoms diffuse into the active area from the Cu TSV through scallop portions with extremely thin Ta layer in TSVs, and consequently, the generation lifetime of minority carrier is significantly reduced. However, the C-t curves of the trench capacitors with 100-nm thick Ta layer exhibit no change after annealing up to 60min. Based on the C-t evaluation results, we developed high reliable and fine-size of 5-μm diameter backside Cu TSV to achieve high reliability and high-end 3-D LSIs.

Original languageEnglish
Title of host publication2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 IEEE International 3D Systems Integration Conference, 3DIC 2011 - Osaka, Japan
Duration: 2012 Jan 312012 Feb 2

Publication series

Name2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

Other

Other2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
CountryJapan
CityOsaka
Period12/1/3112/2/2

Keywords

  • 3D LSI
  • Capacitance-time (C-t)
  • Charge carrier lifetime
  • Cu TSV
  • Cu diffusion

ASJC Scopus subject areas

  • Control and Systems Engineering

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    Lee, K. W., Bea, J. C., Fukushima, T., Ohara, Y., Tanaka, T., & Koyanagi, M. (2011). High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs. In 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011 [6262975] (2011 IEEE International 3D Systems Integration Conference, 3DIC 2011). https://doi.org/10.1109/3DIC.2012.6262975