High reliability packaging technologies for 175deg.C continuous operation in IGBT module

T. Saito, Y. Nishimura, F. Momose, A. Hirao, A. Morozumi, Y. Tamai, E. Mochizuki, Y. Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

One solution for increasing the power density in Insulated Gate Bipolar Transistor (IGBT) module is to raise the maximum junction temperature (Tjmax) =175°C against conventional Tjmax=150°C. However, the challenges for Tjmax=175°C operation are the decreased power cycling (P/C) capability. We have already reported the failure mechanisms about P/C test and new technologies for improving P/C capability [1]. Especially power module for e-auto mobility, using high ambient temperature, is required to guarantee the 175°C continuous operation. Moreover it required about 10 times longer thermal cycling (T/C) capability than what is used for industry. In this paper, we report the effort to improve the T/C capability using new technologies for 175°C continuous operation.

Original languageEnglish
Title of host publicationICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages791-794
Number of pages4
ISBN (Electronic)9784904090138
DOIs
Publication statusPublished - 2015 May 20
Externally publishedYes
Event2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan
Duration: 2015 Apr 142015 Apr 17

Publication series

NameICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
CountryJapan
CityKyoto
Period15/4/1415/4/17

Keywords

  • 175°C
  • Power cycling
  • Reliability
  • Thermal cycling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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