High Reliability of Nanometer-Range N2O-Nitrided Oxides Due to Suppressing Hole Injection

K. Kobayashi, A. Teramoto, T. Nakamura, H. Watanabe, H. Kurokawa, Y. Matsui, M. Hirayama

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

Hole transport and trapping in N2O-nitrided oxides have been studied. It is shown that N2O-nitridation of oxides suppresses hole injection into the oxides. The suppression of hole injection is a mechanism leading to the enhancement of reliability of the nitrided oxides under channel hot-hole and F-N stresses.

Original languageEnglish
Pages (from-to)335-338
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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