TY - GEN
T1 - High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon
AU - Suemitsu, Maki
AU - Sanbonsuge, Shota
AU - Saitoh, Eiji
AU - Jung, Myung Ho
AU - Fukidome, Hirokazu
AU - Filimonov, Sergey
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.
AB - In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.
KW - Epitaxy
KW - Graphene
KW - Monomethylsilane
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=84874023950&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874023950&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.740-742.327
DO - 10.4028/www.scientific.net/MSF.740-742.327
M3 - Conference contribution
AN - SCOPUS:84874023950
SN - 9783037856246
T3 - Materials Science Forum
SP - 327
EP - 330
BT - Silicon Carbide and Related Materials 2012, ECSCRM 2012
A2 - Lebedev, Alexander A.
A2 - Davydov, Sergey Yu.
A2 - Ivanov, Pavel A.
A2 - Levinshtein, Mikhail E.
PB - Trans Tech Publications Ltd
T2 - 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
Y2 - 2 September 2012 through 6 September 2012
ER -