High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon

Maki Suemitsu, Shota Sanbonsuge, Eiji Saitoh, Myung Ho Jung, Hirokazu Fukidome, Sergey Filimonov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012, ECSCRM 2012
EditorsAlexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov, Mikhail E. Levinshtein
PublisherTrans Tech Publications Ltd
Pages327-330
Number of pages4
ISBN (Print)9783037856246
DOIs
Publication statusPublished - 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: 2012 Sep 22012 Sep 6

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period12/9/212/9/6

Keywords

  • Epitaxy
  • Graphene
  • Monomethylsilane
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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