This paper presents our development of a high-rate etching process for fully (0002)-oriented AlN films by using a chlorine-based inductively coupled plasma (ICP) and Ni thin films as hard masks. The influences of etching characteristics (etching rate, selectivity) on various parameters (etching power, pressure and gases mixture) were systematically investigated. We achieved etching rate of 723 nm/min, the highest value that has been developed for single-oriented AlN. Etching selectivity was optimized and reached ∼ 11, in this report. X-ray photoelectron spectroscopy measurements (XPS) offered a deep understanding of the etching processes and revealed the etching mechanism of AlN by chlorine for the first time.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2019 Dec 4|
|Event||18th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2018 - Daytona Beach, United States|
Duration: 2018 Dec 4 → 2018 Dec 7
ASJC Scopus subject areas
- Physics and Astronomy(all)