TY - JOUR
T1 - High-rate etching of single oriented AlN films by chlorine-based inductive coupled plasma for vibrational energy harvesters
AU - Nguyen, H. H.
AU - Van Minh, L.
AU - Kuwano, H.
N1 - Funding Information:
The authors would like to thank Japan Science and Technology Agency (JST) and Miyagi prefecture government. This work was supported by A-STEP project of JST (AS2815014R) and by Environment-friendly device development project of Miyagi prefecture government.
PY - 2019/12/4
Y1 - 2019/12/4
N2 - This paper presents our development of a high-rate etching process for fully (0002)-oriented AlN films by using a chlorine-based inductively coupled plasma (ICP) and Ni thin films as hard masks. The influences of etching characteristics (etching rate, selectivity) on various parameters (etching power, pressure and gases mixture) were systematically investigated. We achieved etching rate of 723 nm/min, the highest value that has been developed for single-oriented AlN. Etching selectivity was optimized and reached ∼ 11, in this report. X-ray photoelectron spectroscopy measurements (XPS) offered a deep understanding of the etching processes and revealed the etching mechanism of AlN by chlorine for the first time.
AB - This paper presents our development of a high-rate etching process for fully (0002)-oriented AlN films by using a chlorine-based inductively coupled plasma (ICP) and Ni thin films as hard masks. The influences of etching characteristics (etching rate, selectivity) on various parameters (etching power, pressure and gases mixture) were systematically investigated. We achieved etching rate of 723 nm/min, the highest value that has been developed for single-oriented AlN. Etching selectivity was optimized and reached ∼ 11, in this report. X-ray photoelectron spectroscopy measurements (XPS) offered a deep understanding of the etching processes and revealed the etching mechanism of AlN by chlorine for the first time.
UR - http://www.scopus.com/inward/record.url?scp=85077820047&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85077820047&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1407/1/012067
DO - 10.1088/1742-6596/1407/1/012067
M3 - Conference article
AN - SCOPUS:85077820047
VL - 1407
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012067
T2 - 18th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2018
Y2 - 4 December 2018 through 7 December 2018
ER -