High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

Yasumasa Koda; Rihito Kuroda; Shigetoshi Sugawa

doi:10.1109/ICSENS.2014.6985340

High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

Yasumasa Koda, Rihito Kuroda, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.

Original language	English
Article number	6985340
Pages (from-to)	1664-1667
Number of pages	4
Journal	Proceedings of IEEE Sensors
Volume	2014-December
Issue number	December
DOIs	https://doi.org/10.1109/ICSENS.2014.6985340
Publication status	Published - 2014 Dec 12
Event	13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain Duration: 2014 Nov 2 → 2014 Nov 5

Keywords

On-chip multiple optical layers
Photodiode
Spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Cite this

@article{bae29ca0bde94edebcabe2122b12ced6,

title = "High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers",

abstract = "High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.",

keywords = "On-chip multiple optical layers, Photodiode, Spectroscopy",

author = "Yasumasa Koda and Rihito Kuroda and Shigetoshi Sugawa",

year = "2014",

month = dec,

day = "12",

doi = "10.1109/ICSENS.2014.6985340",

language = "English",

volume = "2014-December",

pages = "1664--1667",

journal = "Proceedings of IEEE Sensors",

issn = "1930-0395",

number = "December",

note = "13th IEEE SENSORS Conference, SENSORS 2014 ; Conference date: 02-11-2014 Through 05-11-2014",

}

TY - JOUR

T1 - High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

AU - Koda, Yasumasa

AU - Kuroda, Rihito

AU - Sugawa, Shigetoshi

PY - 2014/12/12

Y1 - 2014/12/12

N2 - High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.

AB - High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.

KW - On-chip multiple optical layers

KW - Photodiode

KW - Spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84931049255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84931049255&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2014.6985340

DO - 10.1109/ICSENS.2014.6985340

M3 - Conference article

AN - SCOPUS:84931049255

VL - 2014-December

SP - 1664

EP - 1667

JO - Proceedings of IEEE Sensors

JF - Proceedings of IEEE Sensors

SN - 1930-0395

IS - December

M1 - 6985340

T2 - 13th IEEE SENSORS Conference, SENSORS 2014

Y2 - 2 November 2014 through 5 November 2014

ER -