High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

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2 Citations (Scopus)

Abstract

High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.

Original languageEnglish
Article number6985340
Pages (from-to)1664-1667
Number of pages4
JournalProceedings of IEEE Sensors
Volume2014-December
Issue numberDecember
DOIs
Publication statusPublished - 2014 Dec 12
Event13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain
Duration: 2014 Nov 22014 Nov 5

Keywords

  • On-chip multiple optical layers
  • Photodiode
  • Spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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