Abstract
High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.
Original language | English |
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Article number | 6985340 |
Pages (from-to) | 1664-1667 |
Number of pages | 4 |
Journal | Proceedings of IEEE Sensors |
Volume | 2014-December |
Issue number | December |
DOIs | |
Publication status | Published - 2014 Dec 12 |
Event | 13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain Duration: 2014 Nov 2 → 2014 Nov 5 |
Keywords
- On-chip multiple optical layers
- Photodiode
- Spectroscopy
ASJC Scopus subject areas
- Electrical and Electronic Engineering