High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

Yasumasa Koda; Rihito Kuroda; Shigetoshi Sugawa

doi:10.1109/ICSENS.2014.6985340

High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

Yasumasa Koda, Rihito Kuroda, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.

Original language	English
Title of host publication	IEEE SENSORS 2014, Proceedings
Editors	Francisco J. Arregui
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1664-1667
Number of pages	4
Edition	December
ISBN (Electronic)	9781479901616
DOIs	https://doi.org/10.1109/ICSENS.2014.6985340
Publication status	Published - 2014 Dec 12
Event	13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain Duration: 2014 Nov 2 → 2014 Nov 5

Publication series

Name	Proceedings of IEEE Sensors
Number	December
Volume	2014-December
ISSN (Print)	1930-0395
ISSN (Electronic)	2168-9229

Other

Other	13th IEEE SENSORS Conference, SENSORS 2014
Country/Territory	Spain
City	Valencia
Period	14/11/2 → 14/11/5

Keywords

On-chip multiple optical layers
Photodiode
Spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSENS.2014.6985340

Cite this

Koda, Y., Kuroda, R., & Sugawa, S. (2014). High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers. In F. J. Arregui (Ed.), IEEE SENSORS 2014, Proceedings (December ed., pp. 1664-1667). [6985340] (Proceedings of IEEE Sensors; Vol. 2014-December, No. December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSENS.2014.6985340

High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers. / Koda, Yasumasa; Kuroda, Rihito ; Sugawa, Shigetoshi.

IEEE SENSORS 2014, Proceedings. ed. / Francisco J. Arregui. December. ed. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1664-1667 6985340 (Proceedings of IEEE Sensors; Vol. 2014-December, No. December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koda, Y, Kuroda, R & Sugawa, S 2014, High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers. in FJ Arregui (ed.), IEEE SENSORS 2014, Proceedings. December edn, 6985340, Proceedings of IEEE Sensors, no. December, vol. 2014-December, Institute of Electrical and Electronics Engineers Inc., pp. 1664-1667, 13th IEEE SENSORS Conference, SENSORS 2014, Valencia, Spain, 14/11/2. https://doi.org/10.1109/ICSENS.2014.6985340

Koda Y, Kuroda R , Sugawa S. High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers. In Arregui FJ, editor, IEEE SENSORS 2014, Proceedings. December ed. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1664-1667. 6985340. (Proceedings of IEEE Sensors; December). https://doi.org/10.1109/ICSENS.2014.6985340

Koda, Yasumasa ; Kuroda, Rihito ; Sugawa, Shigetoshi. / High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers. IEEE SENSORS 2014, Proceedings. editor / Francisco J. Arregui. December. ed. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1664-1667 (Proceedings of IEEE Sensors; December).

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abstract = "High quantum efficiency (QE) 200-1000 nm spectral response photodiodes using on-chip multiple high transmittance optical layers are demonstrated for development of a high sensitivity linear photodiode array (PDA). In this paper, seven types of PDs with an optical layer each having a band-pass filter type transmittance are described. A surface photogenerated carrier drift layer is employed to improve internal QE and stability of sensitivity to UV-light. The average QE of 79% for 200-1000 nm and 84% for 200-380 nm were obtained for the fabricated PDs. In addition, after acceleration UV-light exposure, degradation of QE is below 15% and increment of dark current is less than double.",

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High quantum efficiency 200-1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

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