High-quality two-dimensional electron gas at an inverted undoped heterointerface

Y. Hirayama, K. Muraki, T. Saku

Research output: Contribution to journalArticlepeer-review

Abstract

A back-gated undoped heterostructure, in which a two-dimensional electron gas (2DEG) is formed at the inverted undoped heterointerface through the back-side field effect, offers the possibility of high mobility and the feasibility of fabricating several kinds of back-gated structures. We used such a 2DEG system to fabricate a Corbino-disk structure. The results for the back-gated Corbino-disk structure show that the density of the 2DEG is well controlled by the back-gate bias and the fine structures corresponding to the integer and fractional quantized Hall effects are clearly observed, reflecting the high quality of the 2DEG formed in the undoped heterostructure. The characteristics in a low magnetic field region confirm the homogeneous back-gate control of the 2DEG down to a density of less than 1010 cm-2.

Original languageEnglish
Pages (from-to)295-300
Number of pages6
JournalSuperlattices and Microstructures
Volume25
Issue number1-2
DOIs
Publication statusPublished - 1999 Jan
Externally publishedYes

Keywords

  • 2DEG
  • AlGaAs/GaAs
  • Corbino-disk
  • Gated undoped heterostructure

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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