High-quality single-crystal growth and Fermi surface properties of UGe2

S. W. Yun, K. Satoh, Y. Fujimaki, I. Umehara, Y. Onuki, S. Takayanagi, H. Aoki, S. Uji, T. Shimizu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have grown a high-quality single crystal of UGe2 with a residual resistivity ratio of 910 by the 'tri-arc' pulling method and annealing process.

Original languageEnglish
Pages (from-to)129-131
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume186-188
Issue numberC
DOIs
Publication statusPublished - 1993 May 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Yun, S. W., Satoh, K., Fujimaki, Y., Umehara, I., Onuki, Y., Takayanagi, S., Aoki, H., Uji, S., & Shimizu, T. (1993). High-quality single-crystal growth and Fermi surface properties of UGe2. Physica B: Physics of Condensed Matter, 186-188(C), 129-131. https://doi.org/10.1016/0921-4526(93)90513-6