High-quality single crystal growth and Fermi surface properties in f-electron systems

Y. Onuki, R. Settai, H. Shishido, S. Ikeda, T. D. Matsuda, E. Yamamoto, Y. Haga, D. Aoki, H. Harima, H. Yamagami

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High-quality single crystals of rare earth and actinide compounds were grown by using several kinds of techniques such as the Czochralski method, flux method, chemical transport method and Bridgman method, together with purification of a uranium ingot by the solid state electrotransport method. For these single crystals, the de Haas-van Alphen experiment was carried out to clarify the Fermi surface properties, focusing on the quasi-two-dimensional electronic state of RTX5 (R: rare earth, T: transition metal, X: In and Ga) and AnTX5 (An: Th, U, Np and Pu), which were compared with the results of the energy band calculation.

Original languageEnglish
Pages (from-to)1859-1866
Number of pages8
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
Publication statusPublished - 2008 Apr 1

Keywords

  • B1. Actinide compounds
  • B1. Rare earth compounds
  • CeCoIn
  • CeRhIn
  • Fermi surface
  • LaRhIn
  • NpPdAl
  • NpRhGa
  • PuRhGa
  • ThRhIn
  • UCoGa
  • UFeGa
  • UPtGa
  • de Haas-van Alphen effect

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Onuki, Y., Settai, R., Shishido, H., Ikeda, S., Matsuda, T. D., Yamamoto, E., Haga, Y., Aoki, D., Harima, H., & Yamagami, H. (2008). High-quality single crystal growth and Fermi surface properties in f-electron systems. Journal of Crystal Growth, 310(7-9), 1859-1866. https://doi.org/10.1016/j.jcrysgro.2007.09.032