High-quality silicon oxide film formed by diffusion region plasma enhanced chemical vapor deposition and oxygen radical treatment using microwave-excited high-density plasma

Hiroaki Tanaka, Zhong Chuanjie, Yukio Hayakawa, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

In this study, we present the results on silicon oxide films deposited using a Kr/O2/SiH4 high-density and low-ion-energy plasma at low temperature (400°C). The results demonstrate that the post-treatment using the Kr/O2 plasma can eliminate bulk traps related to hydroxylic groups in the films. The silicon oxide films deposited using the high-density low-ion-energy Kr/O2/SiH4 plasma exhibit excellent properties, e.g., low fixed charge density (4 × 1010 cm-2) and high breakdown electric field (>12 MV/cm) and high charge-to-breakdown. Those properties of the deposited films have approached the electrical characteristics of high temperature thermal oxide films. On a poly-Si substrate, a plasma enhanced chemical vapor deposition (PECVD) silicon oxide film that has a high breakdown field and low leakage current is also obtained.

Original languageEnglish
Pages (from-to)1911-1915
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
Publication statusPublished - 2003 Apr

Keywords

  • High-density plasma
  • Low-temperature
  • PECVD
  • Post-treatment
  • Silicon oxide
  • Silicon oxide on poly-Si

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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